Toshiba Electronics Europe GmbH ("Toshiba") has released two new 40V automotive N-channel power MOSFETs that will have a real impact on next-generation vehicle designs. The XPQR3004PB and XPQ1R004PB models use the innovative large gull-wing transistor package format, known as L-TOGLTM.
Thanks to their L-TOGL packages and the resulting improved heat dissipation characteristics, Toshiba's new MOSFETs are highly optimized to handle large currents. They each feature high drain current ratings (400 A for the XPQR3004PB and 200 A for the XPQ1R004PB), as well as industry-leading turn-on resistance values (0,3 mΩ for the XPQR3004PB and 1 mΩ for the XPQ1R004PB).
In these devices there is no internal pole structure (soldered connection). This is achieved by connecting the source and outdoor wires with an innovative copper clip. The use of a multipole structure for the source cables reduces the package resistance (and associated losses) by approximately 70% compared to the existing TO-220SM(W) package. The resulting drain current (ID) rating of the XPQR3004PB represents a 60% increase over the current TKR74F04PB, housed in the TO-220SM(W) package. In addition, the robust copper frame substantially reduces the thermal impedance between the junction and the housing. It is 0,2 °C/W for the XPQR3004PB and 0,65 °C/W for the XPQ1R004PB. This facilitates heat dissipation, lowers operating temperatures, and improves reliability.
Designed for use in demanding automotive applications at temperatures up to 3004°C, the XPQR1PB and XPQ004R175PB are AEC-Q101 certified. Its gull-wing conductors reduce mounting stress and facilitate visual inspection, thus helping to improve the reliability of the soldered joint.
When used in high current automotive applications, such as semiconductor relays or Integrated Start Generators (ISGs), the XPQR3004PB and XPQ1R004PB allow for simplified designs and reduced number of MOSFETs required. This allows to reduce the size, weight and costs.
Serial orders for these devices have already begun.
