New devices will reduce energy consumption in automotive applications
Toshiba Electronics Europe GmbH announces the availability of two more -60 V P-channel MOSFETs based on its U-MOS VI process. This will expand its range of devices suitable for use in automotive applications such as load switches, semiconductor relays and motor drives.
The new XPH8R316MC and XPH13016MC already meet the AEC-Q101 automotive reliability standard. As part of this, they are housed in a SOP Advance (WF) package, a type of SMT with a wettable flank terminal structure. This facilitates automated optical inspection (AOI) of solder joints, key to reliability in harsh automotive environments. An additional advantage is the copper connectivity within the package, which reduces package resistance, improves efficiency and reduces heat buildup.
The XPH8R316MC is rated for a continuous drain current (ID) of -90 A and the 13016 A, respectively. Both devices are rated for a drain-source voltage (VDSS) of -60 V and can operate at channel temperatures (Tch) up to 180 °C.
The maximum drain-source on resistance (RDS(ON)) of the XPH8R316MC is 8,3mΩ, approximately 25% lower than that of Toshiba's existing TPCA8123. In the case of the XPH13016MC, the value is 12,9mΩ, approximately 49% lower than that of the TPCA8125. These very low RDS(ON) values contribute significantly to reducing energy consumption within automotive applications.
The new devices are being mass produced.
