Full SiC Power Modules with high voltage/currency capabilities – 3rd Gen SiC MOSFETs with Trench Gate structure for advanced power management
ROHM Semiconductor unveils its new SiC Power modules as well as its 3rd Generation SiC MOSFETs products, marking another milestone in the development of SiC devices which the company started back in 2010.
Full SiC Power Modules
Having introduced the world’s first mass produced full SiC modules in 2012, ROHM adds now a 1200V/300A high current type to its existing portfolio of full SiC power modules which so far are featuring 1200V/120A (MOSFET and SBD included) respectively 1200V/180A (MOSFET only).
The H-Bridge module BSM300D12P2E001 integrates SiC MOSFET and SBD as well as NTCthermistor and comes in a package of 152mm (W) x 62.0mm (D) x 20.8mm (H). An original electric field mitigation structure, along with a novel screening method, is utilized to provide high reliability. The switching loss of these devices is significantly lower than that of conventional IGBT modules, making high frequency operation possible. For instance, the new module features a switching loss reduction of 77% compared to a 1200V/300A IGBT solution (see fig.) and can replace IGBT modules with higher maximum current rating. For evaluation of its 1200V SiC Power modules, ROHM offers the gate drive circuit board BW9499H.
3rd Gen SiC MOSFETs
ROHM also presents its new 1200V and 650V SiC MOSFETs based on a Trench Gate structure. Compared to conventional planar MOSFETs which have JFET regions increasing the onresistance, the new MOSFETs only reach about half of the same on-resistance over the whole temperature range while the stability of the Gate oxide film and of the Body Diode remains as high as with ROHM’s 2nd Generation SiC MOSFETs. The reverse recovery behaviour and degradation caused by conduction that parasitic diodes usually show is widely eliminated. In principle, there is no tail current during switching, resulting in faster operation and reduced switching loss by 30%. The result is higher reliability and increased current-carrying capacity at reduced cell density and minimum conductivity while keeping a compact format (TO247 package, bare die).
The low on-resistance of the trench SiC MOSFETs is ideal to improve inverter power density and performance and develop next-generation power conversion systems. As a result, power loss is minimized while valuable board space is saved which simplifies layout, and reduces BOM costs.