The new RV4xxx series allows further miniaturization in automotive devices such as ADAS camera modules.
ROHM has announced the development of ultra-compact 1,6x1,6mm size MOSFETs that offer superior mounting reliability. The RV4xxx series is AEC-Q101 qualified, ensuring automotive-grade reliability and performance under extreme conditions. ROHM's original package processing technology enables the miniaturization of automotive components, such as ADAS camera modules, that demand high quality. In recent years, the increasing number of in-vehicle safety and comfort systems, such as ADAS cameras, has highlighted the challenge of having limited space to house these systems and fueled demand for smaller components. To meet this need, bottom electrode type MOSFETs, which can be miniaturized while maintaining high current, are attracting more and more attention.
However, for automotive applications, optical inspection is performed during the assembly process to ensure quality, but for bottom electrode components, the weld height cannot be verified after assembly, making it difficult to confirmation of mounting conditions. ROHM has a proven track record of developing and introducing new products ahead of market trends, and this is precisely the case with the new ultra-compact MOSFETs. This time, ROHM has become the first in the industry to ensure the housing-side electrode height (130 μm) required for vehicle applications using the original Wettable Flank technology. The result is consistent weld quality—even for downhole-type products—allowing automated optical inspection (AOI) machines to easily verify weld conditions after assembly. ROHM is committed to developing compact products that take advantage of this technology, including transistors and bipolar diodes, allowing us to expand our extensive product range and achieve greater miniaturization while providing greater reliability.
Key features
- Patented Wettable Flank technology ensures a package-side electrode height of 130 μm
ROHM's Wettable Flank technology consists of making a cut inside the lead frame on the potting side before plating. However, the occurrence of burrs as a result of cutting into the lead frame can occur more frequently as the height of the cut increases. In response, ROHM has developed a unique method that introduces a barrier layer across the entire surface of the lead frame to minimize the appearance of burrs. This not only prevents component buildup and soldering defects during assembly, but is the first on the market to ensure an electrode height of 130 μm on the DFN1616 (1,6×1,6 mm) package side. ).
- Compact bottom electrode MOSFETs reduce mounting area
Until recently, Schottky Barrier Diodes (SBDs) were commonly used in the reverse connection protection circuitry of ADAS camera modules. But as high-resolution cameras require higher currents in advanced vehicle systems, SBDs are increasingly being replaced by compact MOSFETs that provide low on-resistance and lower heat generation. For example, with current and power consumption of 2,0 A and 0,6 W, respectively, conventional automotive MOSFETs can reduce mounting area by 30% over SBDs. However, the adoption of back-electrode MOSFETs capable of providing excellent heat dissipation, while withstanding large currents in an even smaller form factor, allows the mounting area to be reduced by up to 78% compared to conventional SBDs and by 68% compared to conventional MOSFETs.
Availability: immediate (samples), September 2019 (OEM quantities).
