Increased efficiency and miniaturization in a wide range of power systems, including servers and AC adapters
ROHM has begun mass production of the GNP650TC-Z and GNP1070TCA-Z 1150V GaN (Gallium Nitride) HEMTs optimized for a wide range of power system applications. These new products have been developed together with Ancora Semiconductors, Inc, a subsidiary of Delta Electronics, Inc, a leader in the development of GaN devices.
Improving the efficiency of power supplies and motors, which account for most of the world's electricity consumption, has become a challenge to achieve a decarbonized society. The adoption of new materials, such as GaN and SiC, is key to improving the efficiency of power supplies.
After going into mass production of 150V GaN HEMTs—featuring a gate breakdown voltage of 8V in the year 2022—ROHM created the control IC technology in March 2023 to maximize the performance of GaN. This time, ROHM has developed 650V GaN HEMTs with market-leading performance that contributes to higher efficiency and smaller footprint in a broader range of power systems.
The GNP1070TC-Z and GNP1150TCA-Z offer industry-leading performance in terms of RDS(ON) × Ciss / RDS(ON) × Coss, a factor of merit for GaN HEMTs, resulting in higher efficiency in electrical power systems. At the same time, an integrated ESD protection element improves the resistance to breakage of electrostatic potential energy up to 3,5 kV, thereby increasing the reliability of applications. The high-speed switching characteristics of GaN HEMTs also contribute to further miniaturization of peripheral components.
ROHM continues to improve device performance through its EcoGaN™ range of GaN devices, which contributes to further energy savings in applications and further miniaturization. At the same time as we develop ROHM products, we also promote common development through strategic partnerships to help solve social problems by making applications more efficient and compact.
EcoGaN™
It is ROHM's new range of GaN devices, which contribute to energy savings and miniaturization by maximizing the characteristics of GaN with the goal of achieving lower power consumption of applications, smaller peripheral components, and simpler designs that require fewer pieces.
Product range
Application examples
Ideal for a wide range of power systems in industrial equipment and consumer devices, including servers and AC adapters.
Ancora Semiconductors Inc.
It is a subsidiary of Delta Electronics, a global provider of energy and thermal management solutions. Ancora was founded in July 2022 and its activity is focused on the development of GaN devices and technology.
For more information about Ancora, visit: https://www.ancora-semi.com/EN
GaN HEMT Terminology
GaN (gallium nitride) is a compound semiconductor material used in new generation power devices. Its adoption is increasing due to its superior properties to silicon, as shown by its excellent high-frequency characteristics.
HEMT is an acronym for High Electron Mobility Transistor.
RDS(ON) × Ciss / RDS(ON) × Coss
It is an index to evaluate the switching performance, where Ciss refers to the overall capacitance from the input side and Coss from the output side.
The lower this value, the higher the switching speed and the lower the losses during switching.
ESD (electrostatic discharge)
Overvoltage that occurs when charged objects, such as the human body and electronic equipment, come into contact. This type of overvoltage can cause abnormal operation or destruction of circuits and equipment.
