Jiangsu JieJie Microelectronic announces that its new independently developed PowerJE 10×12 package has entered large-scale mass production. This package complies with the JEDEC MO-299B standard and is compatible with similar TO-LeadLess packages from well-known international manufacturers such as Infineon and Onsemi.
In addition, it has passed the strict reliability test of 1000 temperature cycles (-55°C~150°C). Compared to the traditional TO-263-3L, the footprint is 20% smaller and the height is 45% smaller. As it significantly reduces the footprint, it improves power density, thus adapting to extremely compact terminal designs. Excellent thermal resistance contributes to better heat dissipation, which in the future ensures the long-term reliability of the devices.
In response to customers' increasing demand for performance, JieJie Microelectronics launched N-channel JSFET series JMSH1001ATL (VDS_MIN=100V) and JMSH1504ATL (VDS_MIN=150V) incorporating independent intellectual property rights; both are designed with the advanced PowerJE 10×12 package. When VGS=10V, the RDS(ON)_Typ and FOM measurements of the device are 1,3mΩ / 202 (JMSH1001ATL) and 3,3mΩ / 290 (JMSH1504ATL), respectively. When it comes to electrical properties, JMSH1001ATL surpasses the competition in China and is not much different from similar products in Europe, the United States and Japan.
Furthermore, the linear model/safe operating area (SOA) feature allows the devices to operate safely and reliably even in the high current operating state. Extremely low resistance helps improve operational efficiency, reduce system cost, and extend device life. Both products have wide applications in power tools, light electric vehicles, photovoltaic energy storage inverters, 5G and PoE++ communication and other terminals.
Nick Zhang, Head of Automotive Business Unit at JieJie Microelectronics: “Powered by chips designed by JieJie Microelectronics R&D team, manufactured by IATF 16949 certified factories and subjected to PowerJE 10×12 assembly test In JieJie Microelectronics' advanced automotive system, the electrical properties of JMSH1001ATL are comparable to those of products from international first-line IDM semiconductor manufacturers, which has contributed to the high-end breakthrough in localization of similar products. With excellent thermal conductivity and low parasitic inductance effect of the package, this device is designed to handle up to 411A of current, making it ideal for applications with strict requirements for bill of materials (BOM) space, electrical performance and long-term device reliability.
Both products are in mass production. Samples are available from JJM sales department, contract agents or related trade channels. Information such as product specifications and auxiliary system circuit design data, such as POD (package outline drawing), H-Spice and P-Spice simulation models can be viewed or downloaded directly from the official website: https://www.jjm.com/promosfet1
