Home News Toshiba launches first 30V N-channel Common-Drain MOSFET

Toshiba launches first 30V N-channel Common-Drain MOSFET

toshiba bidirectional power

New device offers bidirectional power in USB applications

Toshiba Electronics Europe GmbH (“Toshiba”) has launched its first 30V N-channel Common-Drain MOSFET. The new SSM10N961L device offers low loss operation and is specially designed for use in devices with USB interfaces. Additionally, it can be used to protect batteries in mobile applications.

With the ubiquity of USB interfaces, many components and devices have been developed that support USB standards. The USB Power Delivery (USB PD) standard supports higher power levels, from 15 W (5 V / 3 A) to a maximum of 240 W (48 V / 5 A), and allows swapping the power and receive sides . This requires USB charging devices to support bi-directional power and this is the use case the new SSM10N961L N-channel common drain MOSFET is designed for.

Until now, Toshiba's N-channel common drain MOSFETs have been 12V products primarily intended for protecting lithium-ion (Li-ion) battery packs in smartphones. The new 30V product can be used for applications requiring voltages higher than 12V, such as load switching for power lines of USB charging devices and protection of lithium-ion battery packs for battery-powered appliances.

The SSM10N961L combines two N channels in a common drain configuration which is the feature that allows bi-directional operation. The source-source breakdown voltage (V(BR)SSS) is 30V for use in higher voltage applications, such as those found in laptops and tablets. To reduce losses in all applications, the source-source turn-on resistance (RSS(ON) It is usually 9,9mΩ.

When mounted on a 18 µm, 407 mm2 Cu pad, the device's current rating is 9,0A. If the chip size and thickness are increased to 70 µm and 687,5 mm2, the rated current increases to 14,0 A.

Despite the power control capability of the SSM10N961L, the device is housed in a small, thin package (TCSPAG-341501) measuring only 3,37 mm × 1,47 mm x 0,11 mm, allowing solutions to be developed high density.

By combining the new device with a TCK42xG controller integrated circuit it is possible to form a load switching circuit with backflow prevention function or a power multiplexer circuit that can switch operations between make before break (MBB) and breakage before manufacturing (BBM-Brake Before Make).

Toshiba has released a Power Multiplexer Circuit as a reference design based on this product combination. The circuit's operation has been verified by Toshiba, giving designers confidence that it will simplify the design process and shorten timelines.

Orders for the new device begin today.