ROHM has developed the TSC3PAK package (14,00 × 18,58 × 3,50 mm) for SiC MOSFETs. By adopting a top-mounted heat dissipation structure that places the heat dissipation surface on the top side of the package, the new product enables automated assembly while achieving heat dissipation performance comparable to that of conventional through-hole packages (TO-247-4L). This contributes to increased efficiency and reliability in power conversion circuits for on-board chargers (OBCs) and electric compressors used in xEVs (electric vehicles).
In xEVs, the adoption of SiC devices is expanding beyond main inverters to include power conversion circuits such as OBCs and electric compressors to improve charging speed and extend cruising range. SiC devices are also increasingly used in industrial equipment, such as high-performance server power supplies and photovoltaic inverters, where high-efficiency operation is required.
Conventional SiC devices have generally relied on through-hole packages, which provide excellent heat dissipation during high-power operation. However, through-hole devices require manual assembly, and their form factor makes achieving a lower package profile difficult. In this context, surface-mount SiC devices compatible with automated assembly have begun to gain traction. To address these issues, the new TSC3PAK offers heat dissipation performance comparable to through-hole technology, such as TO-247, in a surface-mount package.
The new package incorporates ROHM's patented groove structure to ensure a class-leading* creepage distance of 6,66 mm, enabling it to accommodate a peak AC voltage of 1200 V in a pollution grade 2 environment, while maintaining compatibility with widely used products on the market. By enabling a safe insulation design in high-voltage applications, the TSC3PAK also contributes to reduced assembly costs and increased reliability.
Products using the new package incorporate ROHM's 4th generation SiC MOSFETs, which achieve low on-resistance and high-speed switching characteristics. As a result, switching losses during power conversion are significantly reduced, contributing to greater application efficiency and lower energy consumption.
Series production began in June 2026. For more information, please contact your sales representative or visit the contact page on the ROHM website. Simulation models of the six new products are available on the official ROHM website to facilitate rapid circuit design evaluation. ROHM will continue to expand its SiC MOSFET range, contributing to higher performance, smaller size, and greater reliability in electronic equipment.
Application examples
• Automotive systems: on-board chargers (OBC) and electric compressors
• Industrial equipment: photovoltaic inverters and server power supplies
EcoSiC™ Brand
EcoSiC™ is a brand of devices using silicon carbide (SiC) that is attracting attention in the power device field for showing performance even superior to that of silicon (Si). ROHM independently develops technologies essential to the evolution of SiC, from wafer manufacturing and production processes to packaging and quality control methods. At the same time, we have implemented an integrated production system throughout the manufacturing process, consolidating our position as a leading SiC supplier.
EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.
