The new devices combine the current memory cell with advanced CMOS technologies to achieve high investment efficiency
KIOXIA Europe GmbH has announced that KIOXIA Corporation has begun shipping samples of 1 TB (terabit) Triple-Level Cell (TLC) memory devices incorporating its ninth-generation 3D BiCS FLASH™ flash memory technology. These devices are designed for applications such as AI-powered computers and smartphones that have low to medium storage capacities and require high performance.
KIOXIA continues to pursue a dual-axis strategy based on its innovative CMOS Direct-Attached (CBA) technology and On-Pitch Select Gate Drain (OPS) technology. Within this unique dual-axis strategy, KIOXIA is developing two distinct product lines in parallel: its 9th generation solutions, which offer high performance at a relatively low investment cost, and its 10th generation technology, which leverages advanced layer stacking to achieve enormous capacity and superior performance.
The new 9th generation 1TB BiCS FLASH™ TLC devices, developed using a 230-layer stacking process based on 8th generation BiCS FLASH™ technology and advanced CMOS technology, offer a NAND interface speed of 4,8GB/s, which is a 33% improvement over 8th generation devices and matches the performance of 10th generation devices.
Guided by its mission to "improve the world with 'memory'", KIOXIA remains committed to driving technological innovation, strengthening international collaborations and delivering advanced storage solutions that power modern AI infrastructure.
