Mouser Electronics, Inc. has the TGA2976-SM Gallium Nitride (GaN) Power Amplifier from Qorvo. Developed using Qorvo's production method of 2976μm GaN on Silicon Carbide (SiC), the TGA0,25-SM delivers exceptional levels of performance in broadband, power, power added efficiency (PAE) and gain. GaN technology achieves radio frequency (RF) power densities five to six times higher than gallium arsenide-based RF amplifiers. The proven performance and reliability of GaN technology make it an ideal choice for infrastructure, defense and aerospace applications such as radar, electronic warfare, communications, navigation and other similar applications. This increased performance gives designers the flexibility to reduce board footprint and system costs, as well as improve system performance. Available from Mouser Electronics, Qorvo's TGA2976-SM Broadband Amplifier is lead-free and RoHS compliant, offers exceptional broadband performance and is capable of 40V operation. The TGA2976-SM operates between 0,1 and 3,0 GHz and provides greater than 10W saturated output power with greater than 13dB of gain for strong signals and greater than 38 percent PAE. The TGA2976-SM fully matches 50 ohms on both RF ports, thus simplifying system integration. Supplied in a low cost 2976x4mm surface mount air cavity laminate package, the TGA4-SM amplifier is suitable for radar and communications applications used in the defense and commercial markets. For more information visit http:// www.mouser.com/new/qorvo/qorvotga2976- sm-amplifier/.
